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ZXMN2A01E6
ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
20
0.7
1
100
V
μ A
nA
V
I D =250 μ A, V GS =0V
V DS =20V, V GS =0V
V GS = 12V, V DS =0V
I D =250 μ A, V DS = V GS
Static Drain-Source On-State Resistance R DS(on)
(1)
0.12 ?
0.225 ?
V GS =4.5V,
V GS =2.5V,
I D =4A
I D =1.5A
Forward Transconductance (1)(3)
g fs
6.1
S
V DS =10V,I D =4A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
303
59
30
pF
pF
pF
V DS =15 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
2.49
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tr
t d(off)
tf
Qg
Q gs
Q gd
5.21
7.47
4.62
3.0
0.8
1.0
ns
ns
ns
nC
nC
nC
V DD =10V, I D =4A
R G =6.0 ? , V GS =5V
V DS =10V,V GS =4.5V,
I D =4A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
0.9
23
5.65
0.95
V
ns
nC
T J =25°C, I S =3.2A,
V GS =0V
T J =25°C, I F = 4A,
di/dt= 100A/ μ s
NOTES:
(1) Measured under pulsed conditions. Width = 300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 3 - FEBRUARY 2006
4
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